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Volumn 355, Issue 37-42, 2009, Pages 1873-1876
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Features in the photoluminescence line-shape of heavily Er-doped Ge-S-Ga glasses
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Author keywords
Alloys; Amorphous semiconductors; Chalcogenides; Luminescence; Phonons; Rare earths in glasses
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Indexed keywords
1064 NM;
CHALCOGENIDE GLASS;
DECONVOLUTING;
ENERGY LEVEL;
ENHANCED EMISSION;
ER-DOPED;
ER-DOPING;
ERBIUM DOPED;
GAUSSIANS;
P-L EFFECT;
PHOTOLUMINESCENCE LINES;
PL EFFICIENCY;
RARE-EARTHS IN GLASSES;
SUB-BANDS;
TELECOMMUNICATION WAVELENGTHS;
AMORPHOUS ALLOYS;
AMORPHOUS SEMICONDUCTORS;
CHALCOGENIDES;
GERMANIUM;
INTEGRATED OPTOELECTRONICS;
LIGHT;
LIGHT EMISSION;
LIGHT TRANSMISSION;
OPTICAL GLASS;
PHASE CHANGE MEMORY;
PHONONS;
PHOTOLUMINESCENCE;
QUENCHING;
RARE EARTHS;
SEMICONDUCTOR DOPING;
ERBIUM;
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EID: 69149097026
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2008.12.018 Document Type: Article |
Times cited : (5)
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References (14)
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