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Volumn 355, Issue 37-42, 2009, Pages 1873-1876

Features in the photoluminescence line-shape of heavily Er-doped Ge-S-Ga glasses

Author keywords

Alloys; Amorphous semiconductors; Chalcogenides; Luminescence; Phonons; Rare earths in glasses

Indexed keywords

1064 NM; CHALCOGENIDE GLASS; DECONVOLUTING; ENERGY LEVEL; ENHANCED EMISSION; ER-DOPED; ER-DOPING; ERBIUM DOPED; GAUSSIANS; P-L EFFECT; PHOTOLUMINESCENCE LINES; PL EFFICIENCY; RARE-EARTHS IN GLASSES; SUB-BANDS; TELECOMMUNICATION WAVELENGTHS;

EID: 69149097026     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2008.12.018     Document Type: Article
Times cited : (5)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.