Layer growth and connectivity calculations based on a stick-ball model: Application to silicon nanocrystals

Journal of Applied Physics

Volumn 106, Issue 3, 2009, Pages

  Voigt, Felix ^a   Bauer, Gottfried H ^a   Huisken, Friedrich ^b  

^a UNIVERSITY OF OLDENBURG   (Germany)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSPORT; COPLANAR CONTACTS; GEOMETRICAL PARAMETERS; LAYER GROWTH; MAXIMUM DISTANCE; MONTE CARLO; POWER LAW; QUANTITATIVE AGREEMENT; SI NANOCRYSTAL; SILICON NANOCRYSTALS; TOLERANCE VALUES;

NANOCRYSTALS; NANOPARTICLES;

SIMULATORS;

EID: 69149086542     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3168433     Document Type: Article

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