Creation of MnAs nanoclusters during processing of GaMnAs

Radiation Physics and Chemistry

Volumn 78, Issue 10 SUPPL., 2009, Pages

  Bak Misiuk, J ^a   Domagala, J Z ^a   Romanowski, P ^a   Dynowska, E ^a   Lusakowska, E ^a   Misiuk, A ^b   Paszkowicz, W ^a   Sadowski, J ^a,c   Barcz, A ^a,b   Caliebe, W ^d  

^a INSTITUTE OF PHYSICS   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^c LUND UNIVERSITY   (Sweden)

^d DESY   (Germany)

Author keywords

Annealing; GaMnAs; High pressure; Nanocluster; Strain; Thin layer; X ray diffraction

Indexed keywords

AS-GROWN; DEFECTS STRUCTURE; GAAS SUBSTRATES; GAMNAS; HIGH PRESSURE; MN CONCENTRATIONS; MOLECULAR-BEAM EPITAXY; PRIMARY STRUCTURES; PROCESSING CONDITION; SECONDARY ION MASS SPECTROSCOPY; STRAIN STATE; THIN LAYER;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CRYSTAL GROWTH; DIFFRACTION; MANGANESE; MANGANESE COMPOUNDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOCLUSTERS; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; X RAY DIFFRACTION;

GALLIUM ALLOYS;

ARSENIC; GALLIUM; MANGANESE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CONTROLLED STUDY; HYDROSTATIC PRESSURE; MASS SPECTROMETRY; MECHANICAL STRESS; ROENTGEN SPECTROSCOPY; SEMICONDUCTOR;

EID: 69049117162     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.radphyschem.2009.03.083     Document Type: Article

References (11)

1. Bak-Misiuk J., Shalimov A., Misiuk A., Härtwig J., and Trela J. Revealing the structural disturbances in Czochralski silicon by high temperature-pressure treatment. J. Alloys Compd. 401 (2005) 64-68
2. Cauto Jr. O.D.D., Brasil M.J.S.P., Iikawa F., Giles C., Adriano C., Bortoleto J.R.R., Pudenzi M.A.A., Gutlierenz H.R., and Danilov I. Ferromagnetic nanoclusters formed by Mn implantation in GaAs. Appl. Phys. Lett. 86 (2005) 071906-1-071906-3
3. JCPDS 28-0644.
4. Jung J. High-pressure-induced defect in silicon single crystals II: mechanism of stress-field formation at precipitates. Philos. Mag. A 50 (1984) 257-274
5. Moreno M., Trampert A., Jenichen B., Daweritz L., and Ploog K.H. Correlation of structure and magnetism in GaAs with embedded Mn(GaAs) magnetic nanoclusters. J. Appl. Phys. 92 (2002) 4672-4677
6. Moreno M., Jenichen B., Kaganer M., Braun W., Trampert L.A., Daweritz L., and Ploog K. MnAs nanoclusters embedded by X-ray diffuse scattering and coherent scattering. Phys. Rev. B 67 (2003) 235206-1-235206-7
7. Moreno M., Kaganer V., Jenichen B., Trampert L.A., Daweritz L., and Ploog K.H. Micromechanics of MnAs nanocrystals embedded in GaAs. Phys. Rev. B 72 (2005) 115206-1-115206-8
8. Moreno M., Jenichen B., and Ploog K.H. Lattice distortion of MnAs nanocrystals embedded in GaAs: effect on magnetic properties. Appl. Phys. Lett. 86 (2005) 161903-1-161903-3
9. Park H., Jones K.S., Linkman J.A., and Law M.E. Activation volume boron diffusion in silicon and implication for strained film. J. Appl. Phys. 78 (1995) 3664-3670
10. Shalimov A., Bak-Misiuk J., Kaniewski J., Misiuk A., Domagala J., and Kowalczyk E. Strain state of InGa(Al)As/InP layers subjected to high-pressure treatment. Phys. Status Solidi C. 2 (2005) 1948-1952
11. xAs on its Curie temperature. Phys. Rev. B 65 (2002) 201303-201307R