Phase controllable synthesis of unusual ε-Ga2O3 single crystals with promising luminescence property

Solid State Sciences

Volumn 11, Issue 9, 2009, Pages 1592-1596

  Ge, Suxiang ^a,b   Zheng, Zhi ^a  

^a XUCHANG UNIVERSITY   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Crystal growth; Luminescence; Semiconductors; X ray diffraction

Indexed keywords

CALCINATION TEMPERATURE; CONTROLLABLE SYNTHESIS; CRYSTALLINITIES; LUMINESCENCE PROPERTIES; MICROWAVE ASSISTED SYNTHESIS; POWDER X RAY DIFFRACTION; SEMICONDUCTORS; SINGLE-CRYSTALLINE; SYNTHETIC APPROACH;

CALCINATION; CRYSTAL GROWTH; CRYSTALLIZATION; DIFFRACTION; GRAIN BOUNDARIES; LIGHT; LUMINESCENCE OF INORGANIC SOLIDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

LUMINESCENCE;

EID: 68949207000     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2009.06.017     Document Type: Article

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