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Volumn 18, Issue 7, 2009, Pages 2912-2919
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Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs)
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Author keywords
Acceptor; Defects; Gan based high electron mobility transistor (HEMT) radiation
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Indexed keywords
ACCEPTOR;
ACCEPTOR CONCENTRATIONS;
ALGAN;
ALGAN/GAN HEMTS;
ALGAN/GAN HETEROSTRUCTURES;
ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS;
BARRIER LAYERS;
CURRENT-VOLTAGE CHARACTERISTICS;
DEEP-LEVEL DEFECTS;
DEPLETION APPROXIMATION;
DOPING CONCENTRATION;
DRAIN SATURATION CURRENT;
GAN-BASED HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) RADIATION;
HIGH AL CONTENT;
RADIATION DAMAGE EFFECTS;
RADIATION-INDUCED;
APPROXIMATION THEORY;
DEFECTS;
DEGRADATION;
DRAIN CURRENT;
ELECTRON MOBILITY;
ELECTRONS;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
RADIATION;
RADIATION DAMAGE;
RESONANT TUNNELING;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING GALLIUM COMPOUNDS;
THRESHOLD VOLTAGE;
TRANSISTORS;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 68949202903
PISSN: 16741056
EISSN: None
Source Type: Journal
DOI: 10.1088/1674-1056/18/7/049 Document Type: Article |
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Times cited : (8)
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References (10)
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