The role of acceptor density in GaAs/AlGaAs based quantum well hemts

Solid-State Electronics

Volumn 41, Issue 6, 1997, Pages 851-855

  Nawaz, M ^a   Jensen, G U ^b  

^a Centre for Technology at Kjeller (UNIK)   (Norway)

^b SINTEF   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; VOLTAGE MEASUREMENT;

ACCEPTOR DENSITY; POISSON'S EQUATIONS; SCHRODINGER'S EQUATIONS; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031169272     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00040-3     Document Type: Article

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