Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes

Semiconductor Science and Technology

Volumn 24, Issue 7, 2009, Pages

  Carrington, P J ^a   Zhuang, Q ^a   Yin, M ^a   Krier, A ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION PEAKS; HIGH TEMPERATURE; HOLE STATE; INJECTION CURRENTS; INTERNAL QUANTUM EFFICIENCY; LIGHTEMITTING DIODE; MIDINFRARED; MULTI QUANTUM WELLS; ROOM TEMPERATURE; ROOM TEMPERATURE EMISSIONS; TEMPERATURE DEPENDENCE; TYPE II;

CRYSTAL GROWTH; CURRENT DENSITY; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; LIGHT; LIGHT EMISSION; LIGHT TRANSMISSION; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE DISTRIBUTION;

LIGHT EMITTING DIODES;

EID: 68849129559     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/7/075001     Document Type: Article

References (13)

1. Zotova N V, Il'inskaya N D, Karandashev S A, Matveev B A, Remennyi M A and Stus N M 2006 Semiconductors 40 697
2. Krier A, Smirnov V M, Batty P J, Vasil'ev V I, Gagis G S and Kuchinskii V I 2007 Appl. Phys. Lett. 90 211115
3. G. R. Nash, M. K. Haigh, H. R. Hardaway, L. Buckle, A. D. Andreev, N. T. Gordon, S. J. Smith, M. T. Emeny, and T. Ashley. InSbAlInSb quantum-well light-emitting diodes. Applied Physics Letters (2006), 88(5), article number: 051107, Doi:10.1063/1.2171647
4. Suchalkin S, Jung S, Kipshidze G, Shterengas L, Hosoda T, Westerfield D, Snyder D and Belenky G 2008 Appl. Phys. Lett. 93 081107
5. Carrington P J, Solov'ev V A, Zhuang Q, Krier A and Ivanov S V 2008 Appl. Phys. Lett. 93 091101
6. Ciesla C M et al 1996 J. Appl. Phys. 80 2994
7. Theiring S C, Pillai M R, Barnett S A and Wessels B W 1997 J Vac. Sci. Technol. B 15 2026
8. Krier A, Stone M, Zhuang Q D, Po-Wei L, Tsai G and Lin H H 2006 Appl. Phys. Lett. 89 091110
9. Joullié A, Christol P and C R 2003 Physique 4 621-37
10. Ledentsov N N et al 1995 Phys. Rev. B 52 14058
11. Coldren L A and Corzine S W Diode Lasers and Photonic Integrated Circuits (New York: Wiley-Interscience)
12. Heber J D and Philips C C 2003 InAs/InAsSb emitters for the mid-infrared region III-V Semiconductor Heterostructures: Physics and Devices ed W Z Cai (Kerala: Research Signpost) pp 140-67
13. Wilson J and Hawkes J Optoelectronics an Introduction (Englewood Cliffs, NJ: Prentice-Hall)