High power GaN-HEMT microwave switches for X-band and wideband applications

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2008, Pages 329-332

  Bettidi, A ^a   Cetronio, A ^a   De Dominicis, M ^b   Giolo, G ^b   Lanzieri, C ^a   Manna, A ^b   Peroni, M ^a   Proietti, C ^a   Romanini, P ^a  

^a SELEX SISTEMI INTEGRATI   (Italy)

^b Elettronica SpA   (Italy)

Author keywords

AlGaN GaN; Monolithic microwave integrated circuit (MMIC); Power switch; Wideband; X band

Indexed keywords

BANDWIDTH COMPRESSION; DATA COMPRESSION; DC GENERATORS; DIGITAL INTEGRATED CIRCUITS; ELECTRONIC EQUIPMENT TESTING; ELECTRONICS INDUSTRY; GALLIUM ALLOYS; GALLIUM NITRIDE; INTEGRATED CIRCUITS; MICROWAVE CIRCUITS; OPTICAL DESIGN; RADIO WAVES; SEMICONDUCTING GALLIUM;

ALGAN/GAN; COMPRESSION POINTS; GAN-HEMT; HIGH POWERS; INPUT POWERS; INSERTION LOSSES; MICROWAVE SWITCHES; MMIC SWITCHES; MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC); POWER SWITCH; POWER-HANDLING CAPABILITY; RADIO FREQUENCY INTEGRATED CIRCUITS; STATE-OF-THE-ART PERFORMANCE; WIDE BANDS; WIDE-BAND APPLICATIONS; WIDEBAND; X-BAND;

SWITCHES;

EID: 47549109188     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2008.4561447     Document Type: Conference Paper

References (5)

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