Low-temperature thermionic emission from nitrogen-doped nanocrystalline diamond films on n-type Si grown by MPCVD

Diamond and Related Materials

Volumn 18, Issue 10, 2009, Pages 1274-1277

  Suzuki, Mariko ^a   Ono, Tomio ^a   Sakuma, Naoshi ^a   Sakai, Tadashi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

CVD; N doped diamond; Nanocrystalline diamond; Thermionic emission

Indexed keywords

CVD; DOPED NANOCRYSTALLINE DIAMOND; EFFECTIVE WORK FUNCTION; ELECTRIC FIELD DEPENDENCE; EMISSION CURRENT; LOW TEMPERATURES; LOW THRESHOLDS; MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; N-DOPED; N-DOPED DIAMOND; NANOCRYSTALLINE DIAMOND; NCD FILMS; NITROGEN CONCENTRATIONS; NITROGEN-DOPED; RICHARDSON CONSTANT; RICHARDSON-DUSHMAN EQUATION; SATURATION CURRENT; SI SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; THERMIONIC EMITTERS;

CHEMICAL VAPOR DEPOSITION; DIAMONDS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTROCHEMICAL ELECTRODES; MICROWAVES; NANOCRYSTALLINE MATERIALS; NITROGEN; PLASMA DEPOSITION; THERMIONIC EMISSION;

DIAMOND FILMS;

EID: 68749113785     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.05.004     Document Type: Article

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