Low-threshold strained quantum-well GaSb-based lasers emitting in the 2.5- to 2.7-μm wavelength range

IEEE Photonics Technology Letters

Volumn 21, Issue 16, 2009, Pages 1106-1108

  Kashani Shirazi, Kaveh ^a   Vizbaras, Kristijonas ^a   Bachmann, Alexander ^a   Arafin, Shamsul ^a   Amann, Markus Christian ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Optical spectroscopy; Quantum well (QW) lasers

Indexed keywords

CHARACTERISTIC TEMPERATURE; CONTINUOUS WAVE OPERATION; DIODE LASERS; GAINASSB; GASB-BASED LASERS; INTERNAL LOSS; LOW THRESHOLDS; NEAR ROOM TEMPERATURE; OPTICAL SPECTROSCOPY; QUANTUM WELL; QUANTUM-WELL (QW) LASERS; RIDGE WAVEGUIDES; ULTRALOW THRESHOLD CURRENTS; WAVELENGTH RANGES;

CRYSTAL GROWTH; GALLIUM ALLOYS; LASERS; LIGHT TRANSMISSION; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

QUANTUM WELL LASERS;

EID: 68449094951     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2023077     Document Type: Article

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