Study of hot-spot phenomena in cellular power transistors by analytical electro-thermal simulation

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 547-550

  Bagnoli, Paolo Emilio ^a   Di Pascoli, Stefano ^a   Breglio, Giovanni ^b  

^a UNIVERSITY OF PISA   (Italy)

^b UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS;

CURRENT CROWDING; ELECTRICAL CHARACTERIZATION; ELECTRO-THERMAL SIMULATION; OPERATING RANGES; POWER TRANSISTORS; STEADY-STATE REGIME; TEMPERATURE MAPPING; THERMAL BOUNDARY CONDITIONS;

POWER ELECTRONICS;

EID: 68349143582     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194989     Document Type: Conference Paper

References (3)

1. P.L. Hower, D.L. Blackburn, F.F. Oettinger, S. Rubin, "Stable hot-spots and second breakdown in power transistors" Proceedings of PESC '76 Conference, 1976, pp.234-246.
2. G. Breglio, P. Spirito, "Experimental detection of time dependent temperature maps in power bipolar transistors", MicroElectronic Journal, vol.31/9-10, 2000, pp. 735-739
3. G. Breglio, N. Rinaldi, P. Spirito, "Thermal Mapping and 3D Numerical Simulation of New Cellular Power MOS Affected by Electro-Thermal Instability", MicroElectronic Journal, vol. 31/9-10, pp. 741-746, 2000