L10 phase transition in FePt thin films via direct interface reaction

Journal of Physics D: Applied Physics

Volumn 41, Issue 23, 2008, Pages

  Li, Xiaohong ^a,b   Liu, Baoting ^b   Sun, Hongyu ^a   Guo, Jianxin ^b   Wang, Fengqing ^a   Li, Wei ^a   Zhang, Xiangyi ^a  

^a YANSHAN UNIVERSITY   (China)

^b HEBEI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FEPT FILMS; FEPT THIN FILMS; INTERFACE REACTIONS; MAGNETIC RECORDING MEDIUM; ORDERED DOMAINS; ORDERING PROCESS; ORDERING TEMPERATURE; ORDERING TRANSITIONS; RAPID GROWTH; SI SUBSTRATES; ULTRAHIGH DENSITY;

MAGNETIC RECORDING; PHASE INTERFACES; PHASE TRANSITIONS; SUBSTRATES; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 68349137597     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/23/235001     Document Type: Article

References (28)

1. Coffey K R, Parker M A and Howard J K 1995 IEEE Trans. Magn. 31 2737
2. Weller D K, Moser A, Folks L, Best M E, Lee W, Toney M F, Schwickert M, Thiele J U and Doerner M F 2000 IEEE Trans. Magn. 36 10
3. Sun S, Murray C B, Weller D, Folks L and Moser A 2000 Science 287 1989
4. Wiedwald U, Klimmer A, Kern B, Han L, Boyen H-G, Ziemann P and Fauth K 2007 Appl. Phys. Lett. 90 062508
5. Wang H Y, Ma X K, He Y J, Mitani S and Motokawa M 2004 Appl. Phys. Lett. 85 2304
6. Verdes C, Ahner J, Jones P M, Shukla N, Chantrell R W and Weller D 2005 Appl. Phys. Lett. 86 263106
7. Seki T, Shima T, Takanashi K, Takahashi Y, Matsubara E and Hono K 2003 Appl. Phys. Lett. 82 2461
8. Kitakami O, Shimada Y, Oikawa K, Daimon H and Fukamichi K 2001 Appl. Phys. Lett. 78 1104
9. Lai C H, Yang C H and Chiang C C 2003 Appl. Phys. Lett. 83 4550
10. Leistner K, Thomas J, Schlörb H, Weisheit M, Schultz L and Fähler S 2004 Appl. Phys. Lett. 85 3498
11. Xu Y F, Chen J S and Wang J P 2002 Appl. Phys. Lett. 80 3325
12. Zhao Z L, Ding J, Inaba K, Chen J S and Wang J P 2003 Appl. Phys. Lett. 83 2196
13. Li X H, Liu B T, Li W, Sun H Y, Wu D Q and Zhang X Y 2007 J. Appl. Phys. 101 093911
14. Chiang C C, Lai C H and Wu Y C 2006 Appl. Phys. Lett. 88 152508
15. Zhu Y and Cai J W 2005 Appl. Phys. Lett. 87 032504
16. Lai C H, Yang C H, Chiang C C, Balaji T and Tseng T K 2004 Appl. Phys. Lett. 85 4430
17. Lai C H, Chiang C C and Yang C H 2005 J. Appl. Phys. 97 10H310
18. Buaud P P, d'Heurle F M, Irene E A, Patnaik B K and Parikh N R 1991 J. Vac. Sci. Technol. B 9 2536
19. Poate J M and Tisone T C 1974 Appl. Phys. Lett. 24 391
20. Williamson G K and Hall W H 1953 Acta Metal. 1 22
21. Barrett C S and Massalski T B 1982 Structure of Metals (London: Pergamon)
22. Gallego J M, García J M, Alvarez J and Miranda R 1992 Phys. Rev. B 46 13339
23. Li X H, Liu B T, Li F, Sun H Y, Li W, Yang C Z and Zhang X Y 2007 Scr. Mater. 57 77
24. Spada F E, Parker F T, Platt C L and Howard J K 2003 J. Appl. Phys. 94 5123
25. Berry D C and Barmak K 2007 J. Appl. Phys. 102 024912
26. Maeda T, Kai T, Kikitsu A, Nagase T and Akiyama J 2002 Appl. Phys. Lett. 80 2147
27. Wu J H, Chang R S and Horng G J 2004 Thin Solid Films 466 314
28. Hard S, Tu K N and Ahn K Y 1983 Appl. Phys. Lett. 42 597