Microstructure, electrical, and optical properties of evaporated PtSi/p-Si(100) Schottky barriers as high quantum efficient infrared detectors

Thin Solid Films

Volumn 466, Issue 1-2, 2004, Pages 314-319

  Wu, Jih Huah ^a   Chang, Rong Sen ^a   Horng, Gwo Ji ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Electron diffraction; Infrared; PtSi Schottky barrier detector (SBD); Transmission electron microscopy (TEM)

Indexed keywords

CHARGE COUPLED DEVICES; ELECTRON DIFFRACTION; FILM GROWTH; GRAIN SIZE AND SHAPE; INFRARED DETECTORS; MICROSTRUCTURE; OPTICAL FILMS; OPTIMIZATION; QUANTUM EFFICIENCY; RELAXATION PROCESSES; SIGNAL TO NOISE RATIO; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT SCATTERING; ELECTRICAL SCHOTTKY BARRIER; ELECTRON DIFFRACTION PATTERNS; PTSI SCHOTTKY BARRIER DETECTOR (SBD);

PLATINUM COMPOUNDS;

EID: 4544353146     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.03.016     Document Type: Article

References (12)

1. Kosonoky W.F. SPIE Proc. 1308:1990;2.
2. Villani T.S., Kosonoky W.F. SPIE. 1107-01:1989;9.
3. Clark D.L., Berry J.R. SPIE. 1540:1991;303.
4. Yutani N., Yagi H., Kimata M., Nakanishi J., Nagayoshi S., Tsubouchi N. Tech. Dig., Int. Electron Devices Meet. 1991;175. (Washington, DC).
5. Ghozlene H.B., Beaufrére P., Authier A. J. Appl. Phys. 49:1978;3998.
6. Konuma K., Utsumi H. J. Appl. Phys. 76:1994;2182.
7. Pellegrini P.W., Ludington C.E., Weeks M.M. J. Appl. Phys. 67:1990;1417.
8. Silverman J., Pellegrint P., Comer J., Golvbovic A., Weeks M., Mooney J., Fitzgerald J. Mat. Res. Soc. Symp. Proc. 54:1986;515.
9. Cabanski W.A., Schulz M.J. Infrared Phys. 32:1991;29.
10. McCafferty P.G., Sellai A., Dawson P., Elabd H. Solid-State Electron. 39:1996;583.
11. Capone B.R., Taylor R.W., Kosonocky W.F. Opt. Eng. 21:1982;945.
12. Elabd H., Kosonocky W.F. RCA Rev. 43:1982;569.