N-type PTCDI-C13H27 thin-film transistors deposited at different substrate temperature

Thin Solid Films

Volumn 517, Issue 23, 2009, Pages 6271-6274

  Puigdollers, J ^a   Della Pirriera, M ^a   Marsal, A ^a   Orpella, A ^a   Cheylan, S ^b   Voz, C ^a   Alcubilla, R ^a  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^b ICFO INSTITUT DE CIENCIES FOTONIQUES   (Spain)

Author keywords

DOS; PTCDI C13H27; Thin film transistors

Indexed keywords

CHANNEL CONDUCTANCE; DEVICE PERFORMANCE; DIFFERENT SUBSTRATES; DIIMIDE; FIELD-EFFECT MOBILITIES; GATE VOLTAGES; ORGANIC THIN FILM TRANSISTORS; PTCDI-C13H27;

ACTIVATION ENERGY; ELECTRIC POTENTIAL; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

THERMAL EVAPORATION;

EID: 68349117362     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.113     Document Type: Article

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