Investigation of transport numbers in yttrium doped bismuth niobates

Journal of Power Sources

Volumn 194, Issue 1, 2009, Pages 16-19

  Malys M ^a   Holdynski M ^a   Krok, F ^a   Wrobel W ^a   Dygas, J R ^a   Pirovano, C ^b   Vannier, R N ^b   Capoen, E ^b   Abrahams, I ^c  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNITÉ DE CATALYSE ET DE CHIMIE DU SOLIDE   (France)

^c QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

Author keywords

Bismuth oxide; Oxide ion conductors; Oxide ion transference number; Polarization resistance

Indexed keywords

A.C. IMPEDANCE; BISMUTH OXIDE; BISMUTH OXIDES; ELECTRONIC CONDUCTION; ELECTRONIC CONTRIBUTIONS; ELEVATED TEMPERATURE; EMF METHOD; IONIC CONDUCTOR; IONIC TRANSFERENCE; NIOBATES; OXIDE ION CONDUCTORS; OXIDE ION TRANSFERENCE NUMBER; POLARIZATION RESISTANCE; STRUCTURAL FEATURE; TRANSFERENCE NUMBER; TRANSPORT NUMBER; YTTRIUM DOPING;

BISMUTH; DOPING (ADDITIVES); IONIC CONDUCTIVITY; IONS; NIOBIUM; NIOBIUM COMPOUNDS; POLARIZATION; YTTRIUM;

YTTRIUM ALLOYS;

EID: 68249149373     PISSN: 03787753     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpowsour.2009.01.001     Document Type: Article

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