Effects of phosphorus-doping upon the electronic structures of single wall carbon nanotubes

Science in China, Series G: Physics, Mechanics and Astronomy

Volumn 52, Issue 8, 2009, Pages 1139-1145

  Chen, Aqing ^a   Shao, Qingyi ^a   Lin, Zhicheng ^a  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

Author keywords

Density of state; First principle calculation; Formation energy; P doped; Single wall carbon nanotubes

Indexed keywords

DENSITY OF STATE; FIRST-PRINCIPLE CALCULATION; FORMATION ENERGY; P-DOPED; SINGLE WALL CARBON NANOTUBES;

ATOMS; CARBON NANOTUBES; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; INTELLIGENT MATERIALS; PHOSPHORUS; PRASEODYMIUM COMPOUNDS; SOLID STATE PHYSICS;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 68149161991     PISSN: 16721799     EISSN: 18622844     Source Type: Journal    
DOI: 10.1007/s11433-009-0145-7     Document Type: Article

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