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Volumn 407-408, Issue , 2009, Pages 550-554

Study on the abrasive effecting factors of the removal rate during dual-lapping sapphire wafer

Author keywords

Dual lapping; Materials removal ratio; Sapphire wafer; Surface uniformity

Indexed keywords

SAPPHIRE;

EID: 68049137510     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/KEM.407-408.550     Document Type: Article
Times cited : (5)

References (8)
  • 4
    • 0035436280 scopus 로고    scopus 로고
    • Difference between ga films grown on two opposite oriented c-al2o3 wafers[j]
    • HAN Peide, DUAN Xiaofeng, SUN Jialong, ZHANG Z, WANG Zhanguo.: Difference Between Ga Films Grown on Two Opposite Oriented c-Al2O3 Wafers[J], CHINESE JOURNAL OF SEMICONDUCTORS, 22(8): 1030-1034(2001)
    • (2001) Chinese Journal Of Semiconductors , vol.22 , Issue.8 , pp. 1030-1034
    • Han Peide1    Duan Xiaofeng2    Sun Jialong3    Zhang, Z.4    Wang, Z.5
  • 8
    • 0000913935 scopus 로고    scopus 로고
    • Journal of manufacturing science and engineering
    • Y.P.Chang, M.Hashimura, D.A.Dornfeld. Trans. of the ASME, Journal of Manufacturing Science and Engineering, 122(2): 413-419 (2000)
    • (2000) Trans. of The ASME , vol.122 , Issue.2 , pp. 413-419
    • Chang, Y.P.1    Hashimura, M.2    Dornfeld, D.A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.