Intrinsic magnetism induced by vacancy in GaN

Journal of Physics and Chemistry of Solids

Volumn 70, Issue 8, 2009, Pages 1223-1225

  Xiong, Zhihua ^a   Luo, Lan ^b   Peng, Jianfei ^a   Liu, Guodong ^a  

^a Nanchang Normal University   (China)

^b NANCHANG UNIVERSITY   (China)

Author keywords

A. Electronic materials; C. First principles; D. Electronic structure; D. Magnetic properties

Indexed keywords

A. ELECTRONIC MATERIALS; ANTIFERROMAGNETIC STATE; C. FIRST PRINCIPLES; D. ELECTRONIC STRUCTURE; D. MAGNETIC PROPERTIES; ELECTRONIC STRUCTURE CALCULATIONS; FERROMAGNETIC STATE; SPIN PROPERTIES; TOTAL ENERGY; TRANSITION METAL ATOMS; VACANCY CONCENTRATION; WURTZITE GAN;

ANTIFERROMAGNETISM; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM ALLOYS; GALLIUM NITRIDE; LANTHANUM COMPOUNDS; MAGNETIC PROPERTIES; SEMICONDUCTING GALLIUM; TRANSITION METALS; ZINC SULFIDE;

VACANCIES;

EID: 68049137304     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2009.07.009     Document Type: Article

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