Gd5Si4-xPx: Targeted structural changes through increase in valence electron count

Journal of the American Chemical Society

Volumn 131, Issue 6, 2009, Pages 2367-2374

  Svitlyk, Volodymyr ^a   Miller, Gordon J ^b   Mozharivskyj, Yurij ^a  

^a MCMASTER UNIVERSITY   (Canada)

^b IOWA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-BONDING STATE; ORBITAL CALCULATION; PHASE TRANSFORMATION; SHEAR MOVEMENT; STRUCTURAL CHANGE; TIGHT BINDING; TYPE STRUCTURES; VALENCE ELECTRON; X-RAY DIFFRACTION TECHNIQUES;

ELECTRONS; GADOLINIUM; GERMANIUM; OLIGOMERS; PHASE TRANSITIONS; POSITIVE IONS; SILICON; TIN;

CRYSTAL STRUCTURE;

DIMER; GADOLINIUM; PHOSPHORUS; SILICON DERIVATIVE;

ARTICLE; BINDING KINETICS; CALCULATION; CHEMICAL BOND; CHEMICAL PARAMETERS; CHEMICAL STRUCTURE; CRYSTAL STRUCTURE; ELECTRON; SUBSTITUTION REACTION; X RAY DIFFRACTION;

EID: 67749106313     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja8085033     Document Type: Article

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