Growth and transport property measurements of rhenium doped tungsten diselenide single crystal

Materials Chemistry and Physics

Volumn 117, Issue 2-3, 2009, Pages 350-354

  Deshpande, M P ^a   Patel, J B ^a   Pandya, Nilesh N ^a   Parmar, M N ^a   Solanki, G K ^a  

^a SARDAR PATEL UNIVERSITY   (India)

Author keywords

Crystal growth; Electrical properties; Microstructure; Semiconductors

Indexed keywords

ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; ENERGY DISPERSIVE ANALYSIS OF X-RAYS; HEXAGONAL SYSTEMS; HIGH PRESSURE RESISTIVITY; LATTICE PARAMETERS; LOW TEMPERATURES; OPTICAL MICROSCOPES; P-TYPE; PROPERTY MEASUREMENT; RESISTIVITY MEASUREMENT; ROOM TEMPERATURE; SCHERRER'S FORMULA; SCREW DISLOCATIONS; SEMICONDUCTORS; THERMOELECTRIC POWER MEASUREMENT; VAPOUR PHASE TECHNIQUE; X-RAY POWDER;

CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; CRYSTALLITE SIZE; CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; GRAIN BOUNDARIES; GYRATORS; HALL EFFECT; MAGNETIC FIELD EFFECTS; PARAMETER ESTIMATION; PRESSURE EFFECTS; RHENIUM; SELENIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STOICHIOMETRY; THERMAL EFFECTS; TRANSPORT PROPERTIES; TUNGSTEN;

SINGLE CRYSTALS;

EID: 67651233342     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2009.05.058     Document Type: Article

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