SCOPUS 정보 검색 플랫폼

Journal of Electroceramics

Volumn 21, Issue 1-4 SPEC. ISS., 2008, Pages 305-308

Ferroelectric and piezoelectric properties of tungsten doped CaBi 4Ti4O15 ceramics

(5) Zeng, Jiangtao a Wang, Ying a Li, Yongxiang a Yang, Qunbao a Yin, Qingrui a

a SHANGHAI INSTITUTE OF CERAMICS (China)

Author keywords

Bismuth layer structured ferroelectric; Lead free piezoelectric; Tungsten dopant

Indexed keywords

AC CONDUCTIVITY; BISMUTH LAYER-STRUCTURED FERROELECTRIC; COERCIVE FIELD; CONDUCTING MECHANISM; DIELECTRIC CONSTANTS; DOPED CERAMICS; FERROELECTRIC AND PIEZOELECTRIC PROPERTIES; LEAD-FREE PIEZOELECTRIC; PIEZOELECTRIC CONSTANT; REMANENT POLARIZATION; SINGLE PHASE; SOLID STATE REACTION METHOD; TEMPERATURE STABILITY; W-DOPING;

ACTIVATION ENERGY; BISMUTH; CERAMIC CAPACITORS; CERAMIC MATERIALS; DIELECTRIC LOSSES; FERROELECTRIC MATERIALS; FERROELECTRICITY; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; TUNGSTEN;

DOPING (ADDITIVES);

EID: 67651125088 PISSN: 13853449 EISSN: 15738663 Source Type: Journal
DOI: 10.1007/s10832-007-9144-0 Document Type: Article

Times cited : (16)

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