Influence of elastic strains on the adsorption process in porous materials: An experimental approach

Langmuir

Volumn 25, Issue 14, 2009, Pages 8083-8093

  Grosman, Annie ^a   Ortega, Camille ^a  

^a INSTITUT DES NANOSCIENCES DE PARIS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBED AMOUNT; ADSORPTION PROCESS; ATOMIC SCALE; BORON-DOPED; CAPILLARY CONDENSATION; CONDENSATION PRESSURE; ELASTIC STRAIN; EXPERIMENTAL APPROACHES; INTERATOMIC SPACING; LAYER THICKNESS; POROUS LAYERS; POROUS SOLIDS; POROUS SYSTEM; RELAXED STATE; SI-SI BONDS; TWO LAYERS;

ADSORPTION; ATMOSPHERIC TEMPERATURE; ATOMS; BORON; CONDENSATION; ELASTIC DEFORMATION; HYSTERESIS; ISOTHERMS; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES;

POROUS SILICON;

EID: 67651083268     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la9005955     Document Type: Article

References (40)

1. Sereda P. J.; Feldman R. F. In The Solid Gas Interface; Flood, E. A., Ed.; Dekker: New York, 1967; Vol.2, Chapter 24, p 729.
2. Wiig, E. O.; Juhola, A. J. J. Am. Chem. Soc. 1949, 71, 561.
3. Amberg, C. H.; McIntosh, R. Can. J. Chem. 1952, 30, 1012.
4. Dolino, G.; Bellet, D.; Faivre, C. Phys. Rev. B 1996, 54, 17919.
5. Reichenauer, G.; Scherer, G. W. Colloids Surf., A 2001, 187-188, 41.
6. Herman, T.; Day, J.; Beamish, J. Phys. Rev. B 2006, 73, 094127.
7. Zickler, G. A.; Jähnert, S.; Funari, S. S.; Findenegg, G. H.; Paris, O. J. Appl. Crystallogr. 2007, 40, s522.
8. Günther, G.; Prass, J.; Paris, O.; Schoen, M. Phys. Rev. Lett. 2008, 101, 086104.
9. Grosman, A.; Ortega, C. Phys. Rev. B 2008, 78, 085433.
10. Bangham, D. H.; Fakhoury, N. Proc. R. Soc. London, Ser. A 1930, 130, 81.
11. Dash, J. G.; Suzanne, J.; Shechter, H.; Peierls, R. E. Surf. Sci. 1976, 60, 411.
12. Mason, J. Proc. R. Soc. London, Ser. A 1983, 390, 47.
13. Mason, J. Proc. R. Soc. London, Ser. A 1988, 415, 453.
14. Grosman, A.; Ortega, C. Langmuir 2005, 21, 10515.
15. Grosman, A.; Ortega, C. Langmuir 2008, 24, 3977.
16. Coasne, B.; Grosman, A.; Ortega, C.; Simon, M. Phys. Rev. Lett. 2002, 88, 256102.
17. Cohan, L. H. J. Am. Chem. Soc. 1938, 60, 433.
18. Grosman A.; Ortega C. In Properties of Porous Silicon; Canham, L., Ed.; INSPEC Publishers: London, 1997; Chapter 11, p 328.
19. von Bardeleben, H. J.; Stievenard, D.; Grosman, A.; Ortega, C.; Siejka, J. Phys. Rev. B 1993, 47, 10899.
20. Barla, K.; Herino, R.; Bomchil, G.; Pfister, J. C.; Freund, A. J. Cryst. Growth 1984, 68, 727.
21. Sugiyama, H.; Nittono, O. Thin Solid Films 1990, 103, 156.
22. Bellet, D.; Dolino, G. Thin Solid Films 1996, 276, 1.
23. Loni, A.; Simons, A. J.; Canham, L. T.; Phillips, H. J.; Earwaker, L. G. J. Appl. Phys. 1994, 76, 2825.
24. Landau, L. D.; Akhiezer, A. I.; Lifshitz, E. M. Mechanics and Molecular Physics; Pergamon: London, 1967; p 301.
25. Bellet, D.; Lamagnère, P.; Vincent, A.; Bréchet, Y. J. Appl. Phys. 1996, 80, 3772.
26. Gibson, L. J.; Ashby, M. F. Cellular Solids: Structure and Properties; Pergamon: London, 1988.
27. McSkimin, H. J.; Andreatch, P.Jr J. Appl. Phys. 1964, 35, 2161.
28. Scherer, G. W. J. Am. Ceram. Soc. 1986, 69, 473.
29. Estop, E.; Izrael, A.; Sauvage, M. Acta Crystallogr. 1976, A32, 627.
30. Hornstra, J.; Bartels, W. J. J. Cryst. Growth 1978, 44, 513.
31. Bruschi, L.; Fois, G.; Mistura, G.; Sklarek, K.; Hillebrand, R.; Steinhart, M.; Gösele, U. Langmuir 2008, 24, 10936.
32. Reinhart, F. K.; Logan, R. A. J. Appl. Phys. 1973, 44, 3171.
33. Naumov, S.; Khokhlov, A.; Valiullin, R.;Kärger, J.; Monson, P. Phys. Rev. E 2008, 78, 060601.
34. Malanoski, A. P.; van Swol, F. Phys. Rev. E 2002, 66, 41602.
35. Malanoski, A. P.; van Swol, F. Phys. Rev. E 2002, 66, 41603.
36. Kruk, M.; Jaroniec, M.; Sayari, A. Langmuir 1997, 13, 6267.
37. Fan, H. Nat. Mater. 2007, 6, 478.
38. Wallacher, D.; Künzner, N.; Koralev, D.; Knorr, N.; Knorr, K. Phys. Rev. Lett. 2004, 92, 19.
39. Puibasset, J. Langmuir 2009, 25, 903.
40. Amsel, G.; d'Artemare, E.; Battistig, G.; Morazzani, V.; Ortega, C. Nucl. Instrum. Methods Phys. Res., Sect. B 1997, 122, 99.