Electronic structure and optical absorption of the Bi4 Ge 3O12 and the Bi4 Si3O12 scintillators in ultraviolet region: An ab initio study

Journal of Applied Physics

Volumn 106, Issue 1, 2009, Pages

  Lima, A F ^a   Souza, S O ^a   Lalic M V ^a  

^a FEDERAL UNIVERSITY OF SERGIPE   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; AB INITIO STUDY; ABSORPTION CHARACTERISTICS; ABSORPTION PROCESS; BAND GAPS; ENERGY FLOW; OPTICAL ABSORPTION; OPTICAL CHARACTERISTICS; OPTICAL SPECTRA; ULTRAVIOLET REGION;

ABSORPTION; DENSITY FUNCTIONAL THEORY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GERMANIUM; SCINTILLATION COUNTERS; WAVE FUNCTIONS;

BISMUTH COMPOUNDS;

EID: 67650754362     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3160291     Document Type: Article

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