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Volumn 372, Issue 1-2, 1996, Pages 45-50

Bismuth silicate Bi4Si3O12, a faster scintillator than bismuth germanate Bi4Ge3O12

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; EMISSION SPECTROSCOPY; GAMMA RAYS; GERMANIUM COMPOUNDS; HARDNESS; HIGH ENERGY PHYSICS; PHOTOEMISSION; SCINTILLATION; SILICATES; SINGLE CRYSTALS;

EID: 0030104857     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(95)01279-6     Document Type: Article
Times cited : (80)

References (15)
  • 8
    • 85029982768 scopus 로고    scopus 로고
    • note
    • A 570 nm peak seen in the emission spectrum in Ref. [3] must be an artifact due to the scattered excitation radiation of 285 nm.
  • 11
    • 85029976985 scopus 로고    scopus 로고
    • note
    • 60Co γ-ray exposure to 0.88 rad (=0.0088 Gy) of absorbed dose in BSO.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.