Sensitivity of the dark spectral response of thin film silicon based tandem solar cells on the defective regions in the intrinsic layers

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1876-1879

  Rubinelli, F A ^a   Stolk, R L ^b   Sturiale, A ^a   Rath, J K ^b   Schropp, R E I ^b  

^a UNIVERSIDAD NACIONAL DEL LITORAL   (Argentina)

^b UTRECHT UNIVERSITY   (Netherlands)

Author keywords

Absorption; Heterojunctions; Modeling and simulation; Photovoltaics; Sensors; Silicon; Solar cells; Surfaces and interfaces

Indexed keywords

AMORPHOUS SILICON; CASCADE CONNECTIONS; COMPUTER SIMULATION; HETEROJUNCTIONS; LEAKAGE CURRENTS; THIN FILMS;

INTRINSIC LAYERS; PHOTOVOLTAICS; SPECTRAL RESPONSE (SR); TANDEM CELL;

SOLAR CELLS;

EID: 33745474010     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.02.014     Document Type: Article

References (8)

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