Failure precursors for insulated gate bipolar transistors (IGBTs)

IET Seminar Digest

Volumn 2008, Issue 2, 2008, Pages

  Patil, Nishad ^a   Das, Diganta ^a   Goebel, Kai ^b   Pecht, Michael ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b NASA AMES RESEARCH CENTER   (United States)

Author keywords

Failure precursors; IGBTs; Prognostics

Indexed keywords

COLLECTOR EMITTERS; DEVICE DEGRADATION; EFFECTS ANALYSIS; ELECTRICAL PARAMETER; FAILURE PRECURSORS; HYBRID APPROACH; IGBTS; INSULATED GATE; PROGNOSTICS; SYSTEM FAILURES; TEMPERATURE RANGE;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; ELECTRIC POTENTIAL; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); INTERNET SERVICE PROVIDERS; POWER ELECTRONICS; QUALITY ASSURANCE; SYSTEMS ENGINEERING;

FAILURE ANALYSIS;

EID: 67650561659     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ic:20080222     Document Type: Conference Paper

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