SCOPUS 정보 검색 플랫폼

Volumn 95, Issue 1, 2009, Pages

Crystal orientation of GaAs islands grown on SrTiO3 (001) by molecular beam epitaxy

(9) Largeau, L a Cheng, J b Regreny, P b Patriarche, G a Benamrouche, A b Robach, Y b Gendry, M b Hollinger, G b Saint Girons, G b

a CNRS (France)

b INSTITUT DES NANOTECHNOLOGIES DE LYON (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL NUCLEATION; GAAS; HETEROSTRUCTURES; INTERFACE ENERGY; MONOLITHIC INTEGRATION; SRTIO;

COMPETITION; CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; STRONTIUM ALLOYS;

CRYSTAL ORIENTATION;

EID: 67650481096 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3168500 Document Type: Article

Times cited : (10)

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