In-line plasma-chemical etching of crystalline silicon solar wafers at atmospheric pressure

IEEE Transactions on Plasma Science

Volumn 37, Issue 6 PART 1, 2009, Pages 979-984

  Linaschke, Dorit ^a   Leistner, Matthias ^a   Grabau, Patrick ^a   Mäder, Gerrit ^a   Grählert, Wulf ^a   Dani, Ines ^a   Kaskel, Stefan ^a,b   Beyer, Eckhard ^a,b  

^a FRAUNHOFER INSTITUTE FOR MATERIAL AND BEAM TECHNOLOGY IWS   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Atmospheric pressure; DC arc plasma source; Gas phase spectroscopy; Plasma chemical etching

Indexed keywords

AFTERGLOW PLASMAS; ATMOSPHERIC PRESSURE PLASMAS; CHEMICAL ETCHING; CONTINUOUS PRODUCTION; CRYSTALLINE SILICON SOLAR CELLS; CRYSTALLINE SILICONS; DC ARC DISCHARGE; DC ARC PLASMA SOURCE; EDGE ISOLATION; ETCHING GAS; ETCHING RATE; GAS COMPOSITIONS; GAS PHASE SPECTROSCOPY; IN-LINE; IN-LINE MONITORING; INDUSTRIAL TESTS; PLASMA CONDITIONS; PURGE GAS; REACTION PRODUCTS; REACTION ZONES; SILICON ETCHING; VACUUM PROCESS; WASTE GAS; WET CHEMICALS;

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; ATMOSPHERICS; CAVITY RESONATORS; CRYSTALLINE MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GAS DYNAMICS; GASES; LEAKAGE (FLUID); MOISTURE CONTROL; PLASMA ETCHING; PLASMA SOURCES; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SPECTROSCOPIC ANALYSIS; SPECTROSCOPY;

ELECTRIC DISCHARGES;

EID: 67650300478     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2009.2016425     Document Type: Article

References (10)

1. H. Hauser, I. Melnyk, E. Wefringhaus, F. Delahaye, G. Vilsmeier, and P. Fath, "Acidic texturisation of MC-Si using a high throughput in-line prototype system with no organic chemistry," in Proc. 19th Eur. Photovoltaic Solar Energy Conf., Paris, France, 2004, pp. 1094-1097.
2. J. Rentsch, C. Schetter, H. Schlemm, K. Roth, and R. Preu, "Industrialisation of dry phosphorus silicate glass etching and edge isolation for crystalline silicon solar cells," in Proc. 20th Eur. Photovoltaic Solar Energy Conf., Barcelona, Spain, 2005.
3. V. Hopfe and D. W. Sheel, "Atmospheric-pressure plasmas for wide-area thin-film deposition and etching," Plasma Process. Polym., vol. 4, no. 3, pp. 253-265, Apr. 2007.
4. B. Dresler, J. Roch, M. Leistner, B. Leupold, I. Dani, V. Hopfe, M. Heintze, R. Möller, M. Kirschmann, J. Frenck, A. Poruba, R. Barinka, and R. Dahl, "Silicon nitride films deposited by atmospheric pressure microwave PECVD," in Proc. 23rd Eur. Photovoltaic Solar Energy Conf. Exhib., Valencia, Spain, 2008, pp. 1900-1903.
5. E. López, I. Dani, V. Hopfe, H. Wanka, M. Heintze, R. Möller, and A. Hauser, "Plasma-chemical etching at atmospheric pressure for rear emitter removal in crystalline Si solar cells," in Proc. 21st Eur. Photovoltaic Solar Energy Conf., Dresden, Germany, 2006, pp. 1045-1048.
6. V. Hopfe, D. Rogler, G. Maeder, I. Dani, K. Landes, E. Theophile, M. Dzulko, C. Rohrer, and C. Reichhold, "Linear extended ArcJet-CVD - A new PECVD approach for continuous wide area coating under atmospheric pressure," Chem. Vapour Dep., vol. 11, no. 11-12, pp. 510-522, Dec. 2005.
7. R. Hartmann, G. Kraut, and K. Landes, "CIPASS - An ignition method for the innovative plasma torch 'LARGE'," Eur. Phys. J., Appl. Phys., vol. 8, no. 3, pp. 253-256, Sep. 1999.
8. R. Hartmann, J. Zierhut, and K. Landes, "Non-transferred arc plasmatron," European Patent EP 0851720 B1, Nov. 3, 1997.
9. W. Riedel, Anorganische Chemie, 5th ed. Berlin, Germany: De Gruyter, 2002. 120.
10. D. Linaschke, M. Leistner, G. Mäder, W. Grählert, I. Dani, S. Kaskel, E. Lopez, V. Hopfe, M. Kirschmann, and J. Frenck, "Plasma enhanced chemical etching at atmospheric pressure for crystalline silicon wafer processing and process control by in-line FTIR gas spectroscopy," in Proc. 23rd Eur. Photovoltaic Solar Energy Conf. Exhib., Valencia, Spain, 2008, pp. 1907-1910.