Lattice strain due to an atomic vacancy

International Journal of Molecular Sciences

Volumn 10, Issue 6, 2009, Pages 2798-2808

  Li, Shidong ^a   Sellers, Michael S ^b   Basaran, Cemal ^a   Schultz, Andrew J ^b   Kofke, David A ^b  

^a UNIVERSITY AT BUFFALO   (United States)

^b the State University of New York   (United States)

Author keywords

Electromigration; Embedded atom method; Lattice strain; Molecular dynamic simulations; Thermomigration; Vacancy transport; Virial stress

Indexed keywords

ALUMINUM;

ARTICLE; ATOM; EMBEDDING; MOLECULAR DYNAMICS; SIMULATION; VALIDATION STUDY;

ELECTROMIGRATION; EMBEDDED-ATOM METHOD; LATTICE STRAIN; MOLECULAR DYNAMIC SIMULATIONS; THERMOMIGRATION; VACANCY TRANSPORT; VIRIAL STRESS;

ALUMINUM; METALS; MOLECULAR DYNAMICS SIMULATION;

EID: 67649643428     PISSN: None     EISSN: 14220067     Source Type: Journal    
DOI: 10.3390/ijms10062798     Document Type: Article

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