Control of the charge-ordering-insulating phase in epitaxial La 1-xCaxMnO3 (x=0.30-0.45) thin films under the anisotropic strain

Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

  Huang, Zhen ^a   Gao, Guanyin ^a   Yin, Zhizhen ^a   Feng, Xianxian ^a,b   Chen, Yunzhong ^c   Zhao, Xiaoru ^b   Sun, Jirong ^c   Wu, Wenbin ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^c INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC STRAIN; ANISOTROPIC STRAIN RELAXATION; BULK COUNTERPART; CHARGE-ORDERING; DOPING LEVELS; EPITAXIAL SYSTEMS; FERROMAGNETIC METAL; HIGH MAGNETIC FIELDS; IN-BETWEEN; INHOMOGENEITY; INSULATING PHASE; LOW-FIELD MAGNETORESISTANCE; POST-ANNEALING TEMPERATURE; STRAIN FIELDS; TEMPERATURE RANGE;

CALCIUM; ELECTRIC RESISTANCE; LANTHANUM; LATTICE MISMATCH; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MANGANITES; OXIDE MINERALS; SMELTING; STRAIN CONTROL; STRAIN RELAXATION; THIN FILMS;

ANISOTROPY;

EID: 67649532163     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3141751     Document Type: Article

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