Counting statistics of tunneling through a single molecule: Effect of distortion and displacement of vibrational potential surface

Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

  Dong, Bing ^a   Fan, H Y ^a   Lei, X L ^a   Horing, N J M ^b  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b Stevens Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EXPRESSIONS; CHARGE STATE; COUNTING STATISTICS; ELECTRON PHONON; EQUILIBRIUM POSITIONS; EXCITATION SPECTRUM; FANO FACTOR; FRANCK-CONDON; FREQUENCY CHANGES; NEGATIVE DIFFERENTIAL CONDUCTANCE; NEGATIVE VALUES; NON EQUILIBRIUM; QUANTUM DOTS; RATE EQUATIONS; SINGLE LEVEL; SINGLE MOLECULE; TRANSITION MECHANISM; TUNNEL COUPLING; TUNNELING PROPERTIES; VIBRATIONAL DISTRIBUTION; VIBRATIONAL MODES; VIBRATIONAL POTENTIALS; ZERO-FREQUENCY SHOT NOISE;

ELECTRON-PHONON INTERACTIONS; MOLECULES; SEMICONDUCTOR QUANTUM DOTS; TUNNELING (EXCAVATION);

CURRENT VOLTAGE CHARACTERISTICS;

EID: 67649525937     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3137196     Document Type: Article

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