High-temperature piezoelectric single crystal ReCa4O(BO 3)3 for sensor applications

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 55, Issue 12, 2008, Pages 2703-2708

  Zhang, Shujun ^a   Fei, Yiting ^b   Frantz, Eric ^a   Snyder, David W ^a   Chai, Bruce H T ^b   Shrout, Thomas R ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b Crystal Photonics Inc Sanford   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CZOCHRALSKI PULLING METHOD; DIELECTRIC PERMITTIVITIES; ELECTRICAL PROPERTY; ELECTRICAL RESISTIVITY; ELEVATED TEMPERATURE; HIGH QUALITY; HIGH TEMPERATURE; LARGE SIZES; PIEZOELECTRIC SINGLE CRYSTALS; PIEZOELECTRIC STRAIN COEFFICIENTS; PIEZOELECTRIC VOLTAGE; Q-VALUES; ROOM TEMPERATURE; SENSING APPLICATIONS; SENSOR APPLICATIONS; TEMPERATURE RANGE;

CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; ELECTROMECHANICAL DEVICES; PIEZOELECTRICITY;

SINGLE CRYSTALS;

BORIC ACID; CALCIUM DERIVATIVE; LANTHANIDE; OXYGEN DERIVATIVE; YTTRIUM;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTROCHEMISTRY; HEAT; IMPEDANCE; INSTRUMENTATION; METHODOLOGY; TRANSDUCER;

BORATES; CALCIUM COMPOUNDS; CRYSTALLIZATION; ELECTRIC IMPEDANCE; ELECTROCHEMISTRY; HOT TEMPERATURE; METALS, RARE EARTH; OXYGEN COMPOUNDS; TRANSDUCERS; YTTRIUM;

EID: 67649469492     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2008.985     Document Type: Article

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