B-site doping effect on electrical properties of Bi4Ti3-2xNbxTaxO12 ceramics

Scripta Materialia

Volumn 61, Issue 6, 2009, Pages 664-667

  Hou, Jungang ^a,b   Kumar, R V ^a   Qu, Yuanfang ^b   Krsmanovic, Dalibor ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TIANJIN UNIVERSITY   (China)

Author keywords

B site; Bi4Ti3 2xNbxTaxO12; Ceramics; Dielectricity; Piezoelectricity

Indexed keywords

B -SITE DOPING; B-SITE; BI4TI3-2XNBXTAXO12; CERAMICS; CO-DOPING; DIELECTRICITY; ELECTRICAL PROPERTY; OXYGEN VACANCY CONCENTRATION; PHASE TRANSFORMATION; PIEZOELECTRIC COEFFICIENT; SITE VACANCIES; THERMAL VARIATION;

CERAMIC MATERIALS; CRYSTALLOGRAPHY; DIELECTRIC LOSSES; ELECTRIC PROPERTIES; NIOBIUM; OXYGEN; OXYGEN VACANCIES; PIEZOELECTRIC DEVICES; PIEZOELECTRICITY; PYROELECTRICITY; VACANCIES;

TANTALUM;

EID: 67649442567     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2009.06.012     Document Type: Article

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