Study of defects in proton irradiated GaAs/AlGaAs solar cells

Applied Surface Science

Volumn 255, Issue 19, 2009, Pages 8257-8262

  Zhan, Fenfen ^a   Hu, Jianmin ^b   Zhang, Yifan ^a   Lu, Fang ^a  

^a FUDAN UNIVERSITY   (China)

^b HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Defect profile; DLTS; IV; Proton irradiation; Solar cells

Indexed keywords

DEFECTS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; PROTON IRRADIATION; SEMICONDUCTING GALLIUM; SOLAR CELLS;

CALCULATION FORMULA; CURRENT VOLTAGE; DEEP-LEVEL DEFECTS; DEFECT CONCENTRATIONS; DEPLETION LAYER; DLTS MEASUREMENTS; SRIM SIMULATION; STOPPING AND RANGE OF IONS IN MATTERS;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 67649425649     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.05.092     Document Type: Article

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