An investigation of nanocrystalline semiconductor assemblies as a material basis for ionizing-radiation detectors

IEEE Transactions on Nuclear Science

Volumn 56, Issue 3, 2009, Pages 841-848

  Kim, Geehyun ^a   Huang, James ^a   Hammig, Mark D ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

CdTe quantum dots; Nanocrystalline semiconductors; Nuclear radiation detectors; PbSe quantum dots

Indexed keywords

CDTE; CDTE QUANTUM DOTS; COLLOIDAL SYNTHESIS; DEPLETION REGION; DROP-CASTING; IMPURITY CONCENTRATION; JUNCTION PROPERTIES; LAYER-BY-LAYER METHODS; METALLIC ELECTRODES; METALLIC SUBSTRATE; MULTIEXCITON STATE; NANOCRYSTALLINE; NANOCRYSTALLINE FILMS; NANOCRYSTALLINE SEMICONDUCTORS; NUCLEAR RADIATION DETECTORS; PBSE QUANTUM DOTS; POLYCATIONS; RECTIFYING CHARACTERISTICS; SCANNING ELECTRON MICROSCOPE; THIOGLYCOLIC ACID; VISIBLE LIGHT;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; DISTILLATION; EXCITONS; IMPURITIES; IONIZING RADIATION; METALLIC GLASS; NANOCRYSTALLINE MATERIALS; NUCLEAR RADIATION SPECTROSCOPY; RADIATION DAMAGE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS;

RADIATION DETECTORS;

EID: 67649371658     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2009447     Document Type: Article

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