Synthesis and investigation on the extrinsic carrier concentration of indium doped ZnO tetrapods

Journal of Alloys and Compounds

Volumn 481, Issue 1-2, 2009, Pages 649-653

  Jung, M N ^a   Lee, E S ^a   Jeon, T I ^a   Gil, K S ^a   Kim, J J ^b   Murakami, Y ^c   Lee, S H ^c   Park, S H ^c   Lee, H J ^c   Yao, T ^c   Makino, H ^d   Chang, J H ^a  

^a Korea Maritime University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c TOHOKU UNIVERSITY   (Japan)

^d KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Crystallite; In doped ZnO; Optical properties; Tetrapod; Vapor phase growth

Indexed keywords

CONCENTRATION OF; DOPED ZNO; EMISSION INTENSITY; FREE CARRIER ABSORPTION; HEXAGONAL PHASE; IN-DOPED ZNO; INDIUM-DOPED ZNO; LOWER ENERGIES; NEAR BAND EDGE EMISSIONS; PHOTOLUMINESCENCE MEASUREMENTS; REFLECTANCE SPECTRUM; STRUCTURAL PHASE TRANSFORMATIONS; TETRAPOD; VAPOR PHASE; VAPOR PHASE GROWTH; ZNO;

BIOACTIVITY; CONCENTRATION (PROCESS); CRYSTALLITES; EMISSION SPECTROSCOPY; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; OPTICAL PROPERTIES; RECONNAISSANCE AIRCRAFT; SEMICONDUCTING ZINC COMPOUNDS; SYNTHESIS (CHEMICAL); VAPOR PHASE EPITAXY; VAPORS; ZINC OXIDE;

CARRIER CONCENTRATION;

EID: 67649280631     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.03.065     Document Type: Article

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