A high gain 77 GHz power amplifier operating at 0.7 v based on 90 nm CMOS technology

IEEE Microwave and Wireless Components Letters

Volumn 19, Issue 5, 2009, Pages 329-331

  Hamada, Yasuhiro ^a   Tanomura, Masahiro ^a   Ito, Masaharu ^a   Maruhashi, Kenichi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

CMOSFET power amplifiers; Millimeter wave power amplifiers

Indexed keywords

90NM CMOS; CMOS AMPLIFIERS; CMOSFET POWER AMPLIFIERS; COMPENSATION TECHNIQUES; GATE BIAS; GATE WIDTHS; HIGH GAIN; HOT CARRIER INJECTION; LINEAR GAIN; LOW SUPPLY VOLTAGES; NMOSFETS; SATURATED OUTPUT POWER; SUPPLY VOLTAGES; TEMPERATURE CHARACTERISTIC;

CMOS INTEGRATED CIRCUITS; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; WAVE POWER;

POWER AMPLIFIERS;

EID: 67649224132     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2009.2017613     Document Type: Article

References (8)

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