Ultrashort dead time of photon-counting InGaAs avalanche photodiodes

Applied Physics Letters

Volumn 94, Issue 23, 2009, Pages

  Dixon, A R ^a,b   Dynes, J F ^a   Yuan, Z L ^a   Sharpe, A W ^a   Bennett, A J ^a   Shields, A J ^a  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEAD TIME; DETECTION EFFICIENCY; DIODE LASERS; GEIGER MODES; HIGH BIT RATES; MAXIMUM DETECTION RATES; PHOTON COUNTING; QUANTUM COMPUTING; QUANTUM KEY DISTRIBUTION; SECOND-ORDER CORRELATION FUNCTIONS; SHORT DEAD TIME;

AVALANCHE PHOTODIODES; HETEROJUNCTION BIPOLAR TRANSISTORS; PHOTODIODES; QUANTUM CHEMISTRY; QUANTUM COMPUTERS; QUANTUM CRYPTOGRAPHY; SEMICONDUCTING INDIUM; THREE TERM CONTROL SYSTEMS;

DETECTORS;

EID: 67649103777     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3151864     Document Type: Article

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