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Throughout this paper the following notations are used: EF = pF2 /2 m, ωc =eB/ m, and τ= σD m /n e2, where m is the electron-band mass (0.067 me for GaAs and 0.21 me for Si) and σD is the Drude conductivity. The latter is found by extrapolating the conductivity in ballistic regime to T=0.
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Throughout this paper the following notations are used: EF = pF2 /2 m, ωc =eB/ m, and τ= σD m /n e2, where m is the electron-band mass (0.067 me for GaAs and 0.21 me for Si) and σD is the Drude conductivity. The latter is found by extrapolating the conductivity in ballistic regime to T=0.
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For short-range scatterers case, τ should be of the same order as the all-angle scattering time τq. From temperature dependence of the Shubnikov-de Haas oscillations amplitude we found that for all our samples τq equal (0.4-1) τ, indicating short-range scattering.
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