Effective Landé factor g* of conduction electrons in GaAs and AlSb

Solid State Communications

Volumn 142, Issue 6, 2007, Pages 342-345

  Fraj, N ^a   Ben Radhia, S ^a   Boujdaria, K ^a  

^a UNIVERSITY OF CARTHAGE   (Tunisia)

Author keywords

A. Semiconductors; D. Electronic band structure

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSPORT PROPERTIES; HAMILTONIANS; PERTURBATION TECHNIQUES; SEMICONDUCTING ALUMINUM COMPOUNDS;

CONDUCTION ELECTRONS; ELECTRONIC BAND STRUCTURE; PERTURBATION THEORY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34147094236     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.02.037     Document Type: Article

References (30)

1. Cohen M.L., and Chelikowsky J.R. Electronic structure and optical properties of semiconductors. In: Cardona M. (Ed). Springer Series in Solid State Sciences (1989), Springer, New York
2. Wang L.W., and Zunger A. Phys. Rev. B 54 (1996) 11417
3. Vogl P., Hjalmarson H.P., and Dow J.D. J. Phys. Chem. Solids 44 (1983) 365
4. Richardson S.L., Cohen M.L., Louie S.G., and Chelikowsky J.R. Phys. Rev. B 33 (1986) 1177
5. Chang Y.C., and Aspnes D.E. Phys. Rev. B 41 (1990) 12002
6. Jancu J.M., Scholz R., Beltram F., and Bassani F. Phys. Rev. B 57 (1998) 6493
7. Sapra S., Shanthi N., and Sarma D.D. Phys. Rev. B 66 (2002) 205202
8. Boykin T.B., Klimeck G., and Oyafuso F. Phys. Rev. B 69 (2004) 115201
9. Cardona M., and Pollak F.H. Phys. Rev. 142 (1966) 530
10. Mycielski A., Kossut J., Dobrowolska M., and Dobrowolski W. J. Phys. C 15 (1982) 3293
11. Rössler U. Solid State Commun. 49 (1984) 943
12. Pikus G.E. Izv. Akad. Nauk, Ser. Fiz. 52 (1988) 493
13. Cardona M., Christensen N.E., and Fasol G. Phys. Rev. B 38 (1988) 1806
14. Pfeffer P., and Zawadski W. Phys. Rev. B 41 (1990) 1561
15. Pfeffer P., and Zawadski W. Phys. Rev. B 53 (1996) 12813
16. Cavassilas N., Aniel F., Boujdaria K., and Fishman G. Phys. Rev. B 64 (2001) 115207
17. Ben Radhia S., Ridene S., Boujdaria K., Bouchriha H., and Fishman G. J. Appl. Phys. 92 (2002) 4422
18. Ben Radhia S., Boujdaria K., Ridene S., Bouchriha H., and Fishman G. J. Appl. Phys. 94 (2003) 5726
19. Boujdaria K., and Zitouni O. Solid State Phys. 129 (2004) 205
20. Richard S., Aniel F., and Fishman G. Phys. Rev. B 70 (2004) 235204
21. Zitouni O., Boujdaria K., and Bouchriha H. Semicond. Sci. Technol. 20 (2005) 1
22. Kane E.O. J. Phys. Chem. Solids 1 (1957) 249
23. Roth L.M., Lax B., and Zwerdling S. Phys. Rev. 90 (1959) 114
24. Hermann C., and Weisbuch C. Phys. Rev. B 15 (1977) 823
25. Pollak F.H., Higginbotham C.W., and Cardona M. J. Phys. Soc. Jpn. 21 Suppl. (1966) 20
26. C = 0.171 eV.
27. Jancu J.-M., Scholz R., De Andrada e Silva E.A., and La Rocca G.C. Phys. Rev. B 72 (2005) 193201
28. Rössler U. Solid State Commun. 49 (1984) 943
29. C = 0.171 eV.
30. Vurgaftman I., Meyer J.R., and Ram-Mohan L.R. J. Appl. Phys. 89 (2001) 5815