Dielectric relaxations in undoped, Ce-doped and Ce,Zr-codoped Lu3Al5O12 single crystals

Journal of Physics and Chemistry of Solids

Volumn 70, Issue 3-4, 2009, Pages 595-599

  Xing, L ^a   Xu, X B ^a,b   Gu, M ^a   Tang, T B ^b   Mihokova, E ^c   Nikl, M ^c   Vedda, A ^d  

^a NANJING UNIVERSITY   (China)

^b HONG KONG BAPTIST UNIVERSITY   (Hong Kong)

^c INSTITUTE OF PHYSICS   (Czech Republic)

^d UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

A. Optical materials; D. Defects; D. Dielectric properties

Indexed keywords

A. OPTICAL MATERIALS; ANION VACANCIES; ARRHENIUS; BEFORE AND AFTER; CO-DOPED; D. DEFECTS; D. DIELECTRIC PROPERTIES; DEEP TRAPS; DOPED SAMPLES; IONISING RADIATIONS; OXYGEN IONS; PERMANENT DIPOLES; PHOTO-ELECTRONS; THERMALLY STIMULATED LUMINESCENCES; UV-VISIBLE ABSORPTION SPECTRUM;

ALUMINUM; CERAMIC CAPACITORS; CERIUM; CERIUM COMPOUNDS; CHARGE CARRIERS; DEFECTS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DIELECTRIC RELAXATION; DIELECTRIC SPECTROSCOPY; IONIZING RADIATION; LUTETIUM; NEGATIVE IONS; OPTICAL MATERIALS; OXYGEN; OXYGEN VACANCIES; ZIRCONIUM;

SINGLE CRYSTALS;

EID: 67349277256     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2009.01.002     Document Type: Article

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