Doping mechanism of antinomy in PbWO4

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 136-139

  Li, Wensheng ^a   Tang, Tong B ^a   Feng, Xiqi ^b  

^a HONG KONG BAPTIST UNIVERSITY   (Hong Kong)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DC CONDUCTIVITY; DOPING MECHANISM; HIGH MOBILITY; INTERSTITIAL IONS; LOW CONCENTRATIONS; LOW-ACTIVATION ENERGY; OXYGEN IONS; SB-DOPED; SUBSTITUTIONAL IMPURITIES; UNIQUE FEATURES; VISIBLE SPECTRA;

ACTIVATION ENERGY; COLOR CENTERS; DOPING (ADDITIVES); SUBSTITUTION REACTIONS;

IONS;

EID: 0036139383     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1425075     Document Type: Article

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