Rietveld analysys and electrical properties of lanthanum doped BiFeO3 ceramics

Materials Chemistry and Physics

Volumn 116, Issue 2-3, 2009, Pages 305-309

  Simoes A Z ^a   Garcia, Filiberto Gonzalez ^a   Riccardi, Carla dos Santos ^b  

^a FEDERAL UNIVERSITY OF ITAJUBÁ   (Brazil)

^b SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

Author keywords

Annealing; Ceramics; Ferroelectricity; Rietveld analyses

Indexed keywords

BISMUTH FERRITES; CERAMICS; ELECTRICAL BEHAVIORS; ELECTRICAL PROPERTY; FERROELECTRIC HYSTERESIS LOOP; LANTHANUM ADDITIONS; MORPHOLOGICAL CHARACTERISTIC; ORTHORHOMBICITY; POLYMERIC PRECURSOR SOLUTION; RIETVELD; ROOM TEMPERATURE; SECONDARY PHASIS;

BISMUTH; CERAMIC MATERIALS; ELECTRIC PROPERTIES; FERROELECTRICITY; HYSTERESIS; HYSTERESIS LOOPS; IRON OXIDES; LANTHANUM ALLOYS; RIETVELD ANALYSIS; RIETVELD METHOD; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING BISMUTH COMPOUNDS;

LANTHANUM;

EID: 67349249849     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2009.04.036     Document Type: Review

References (35)

1. Krainik N.N., Khuchua N.P., Zhdanova V.V., and Evseev V.A. Sov. Phys. Solid State 8 (1966) 654
2. Tomashpolskii Y.Y., and Venevtsev Y.N. Sov. Phys. Crystallogr. 12 (1967) 18
3. Tomashpolskii Y.Y., Venevtsev Y.N., and Zhdanov G.S. Sov. Phys. Crystallogr. 12 (1967) 209
4. Ismailzade I.G. Sov. Phys. Dokl. 11 (1967) 747
5. Michel C., Moreau J.M., Achenbach G.D., Gerson R., and James W.J. Solid State Commun. 7 (1969) 701
6. Teague J.R., Gerson R., and James W.J. Solid State Commun. 8 (1970) 1073
7. Moreau J.M., Michel C., Gerson R., and James W.J. J. Phys. Chem. Solids 32 (1971) 1315
8. Blaauw C., and van der Woude F. J. Phys. C 6 (1973) 1422
9. Jacobson A.J., and Fender B.E.F. J. Phys. C 8 (1975) 844
10. Fischer P., Połomska M., Sosnowska I., and Szymański M. J. Phys. C 13 (1980) 1931
11. Fedulov S.A. Sov. Phys. Dokl. 6 (1962) 726
12. Kubel F., and Schmid H. Acta Crystallogr., Sect. B: Struct. Sci. 46 (1963) 698
13. Smolenskii G. Sov. Phys. Solid State 2 (1961) 2651
14. Kiselev S.V., Ozerov R.P., and Zhdanov G.S. Sov. Phys. Dokl. 7 (1963) 742
15. Sosnowska I., Peterlin-Neumaier T., and Steichele E. J. Phys. C 15 (1982) 4835
16. Dzialoshinskii I.E. Sov. Phys. JETP 5 (1957) 1259
17. Moriya T. Phys. Rev. 120 (1960) 91
18. Wang J., Neaton J.B., Zheng H., Nagarajan V., Ogale S.B., Liu B., Viehland D., Vaithyanathan V., Schlom D.G., Waghmare U.V., Spaldin N.A., Rabe K.M., Wuttig M., and Ramesh R. Science 299 (2003) 1719
19. Yun K.Y., Noda M., Okuyama M., Saeki H., Tabata H., and Saito K. J. Appl. Phys. 96 (2004) 3399
20. Mahesh Kumar M., Palkar V.R., Srinivas K., and Suryanarayana S.V. Appl. Phys. Lett. 76 (2000) 2764
21. Wang Y.P., Zhou L., Zhang M.F., Chen X.Y., Liu J.M., and Liu Z.G. Appl. Phys. Lett. 84 (2004) 1731
22. Pradhan A.K., Zhang K., Hunter D., Dadson J.B., and Loutts G.B. J. Appl. Phys. 97 (2005) 093903
23. Ghosh S., Dasgupta S., Sen A., and Sekhar H. J. Am. Ceram. Soc. 88 (2005) 1349
24. Simões A.Z., Cavalcante L.S., Riccardi C.S., Varela J.A., and Longo E. Curr. Appl. Phys. 9 (2009) 520
25. M. Pechini, U.S. Patent no. 3.330.697 (1967).
26. Zaghete M.A., Paiva-Santos C.O., Varela J.A., Longo E., and Mascarenhas Y.P. J. Am. Ceram. Soc. 75 (1992) 2088
27. Young R.A., Sakthivel A., Moss T.S., and Paiva-Santos C.O. J. Appl. Crystallogr. 28 (1995) 366
28. Simões A.Z., Stojanovic B.D., Ramirez M.A., Cavalheiro A.A., Longo E., and Varela J.A. Ceram. Int. 34 (2008) 257
29. Gabbasova Z.V., Kuzmin M.D., Zvezdin A.K., Dubenko I.S., Murashov V.A., Rakov D.N., and Krynetsky I.B. Phys. Lett. A 158 (1991) 491
30. Zalesskii A.V., Frolov A.A., Khimich T.A., and Bush A.A. Phys. Solid State 45 (2003) 141
31. Lee D., Kim M.G., Ryu S., Jang H.M., and Lee S.G. Appl. Phys. Lett. 86 (2005) 222903
32. Wang J., et al. Science 299 (2003) 1719
33. Li J., et al. Appl. Phys. Lett. 84 (2004) 5261
34. Luo S., Noguchia Y., Miyayamab M., and Kudo T. Mater. Res. Bull. 36 (2001) 531
35. Noguchi Y., and Miyayama M. Appl Phys Lett. 78 (2001) 1903