Ion-induced transformations of a W-Si interface

Vacuum

Volumn 83, Issue SUPPL.1, 2009, Pages

  Gawlik, Grzegorz ^a   Jagielski, Jacek ^a,b  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

Author keywords

Ion irradiation; SEM; Tungsten silicide; XRD

Indexed keywords

ARGON ION BEAMS; DEPOSITION SEQUENCES; ION IRRADIATION; ION-BEAM MIXING; RBS ANALYSIS; SEM; SEM IMAGING; SILICON LAYERS; STRUCTURAL TRANSFORMATIONS; SUB-LAYERS; THERMALLY OXIDIZED SILICONS; TUNGSTEN SILICIDE; XRD;

ARGON; ELECTRODEPOSITION; ION BEAMS; IONS; IRRADIATION; MAGNETRON SPUTTERING; MULTILAYERS; PHASE INTERFACES; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; TUNGSTEN; VACUUM DEPOSITION; X RAY DIFFRACTION ANALYSIS;

SILICON WAFERS;

EID: 67349245492     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.01.038     Document Type: Article

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