The wetting behaviour and reaction kinetics in diamond-silicon carbide systems

Ceramics International

Volumn 35, Issue 6, 2009, Pages 2435-2441

  Mlungwane, K ^a,b   Sigalas, I ^a,b   Herrmann, M ^c   Rodriguez M ^d  

^a UNIVERSITY OF THE WITWATERSRAND   (South Africa)

^b DST/NRF Centre of Excellence in Strong Materials   (South Africa)

^c FRAUNHOFER INSTITUTE FOR CERAMIC TECHNOLOGIES AND SYSTEMS   (Germany)

^d INSTITUTO DE CERÁMICA Y VIDRIO   (Spain)

Author keywords

A. Sintering; B. Composites; D. SiC

Indexed keywords

A. SINTERING; B. COMPOSITES; CVD DIAMOND; D. SIC; GLASSY CARBON; INITIAL RATE; MOLTEN SILICON; SEM; SIC FORMATION; SILICON ON DIAMONDS; WETTING BEHAVIOUR;

CHEMICAL VAPOR DEPOSITION; CONTACT ANGLE; DIAMONDS; GRAIN BOUNDARIES; GRAIN GROWTH; REACTION KINETICS; SINTERING; WETTING;

SILICON CARBIDE;

EID: 67349237453     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2009.02.019     Document Type: Article

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