Classical solutions of drift-diffusion equations for semiconductor devices: The two-dimensional case

Nonlinear Analysis, Theory, Methods and Applications

Volumn 71, Issue 5-6, 2009, Pages 1584-1605

  Kaiser, Hans Christoph ^a   Neidhard, Hagen ^a   Rehberg, Joachim ^a  

^a WEIERSTRASS INSTITUTE FOR APPLIED ANALYSIS AND STOCHASTICS   (Germany)

Author keywords

Initial boundary value problem; Quasi linear parabolic systems; Reaction diffusion processes

Indexed keywords

CLASSICAL SOLUTIONS; DIFFERENTIABILITY; DRIFT-DIFFUSION EQUATIONS; DRIVING FORCES; ELECTRONIC DEVICES; EVOLUTION EQUATIONS; FINITE VOLUME DISCRETIZATION; FINITE VOLUME SCHEMES; GAUSS' THEOREMS; HETEROGENEOUS MATERIALS; HOLE CURRENTS; HOLE DENSITIES; INITIAL BOUNDARY VALUE PROBLEM; INTEGRABLE FUNCTIONS; LEBESGUE SPACES; MIXED BOUNDARY CONDITIONS; NON SMOOTHES; QUASI-LINEAR PARABOLIC SYSTEMS; REACTION-DIFFUSION PROCESSES; SCIENTIFIC COMPUTING; SPACE DISCRETIZATION; SPATIAL DOMAINS; TIME DISCRETIZATION; TWO-DIMENSIONAL;

DIFFUSION IN LIQUIDS; ELECTRIC CONDUCTIVITY; NON NEWTONIAN FLOW; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES;

DIFFERENTIAL EQUATIONS;

EID: 67349216664     PISSN: 0362546X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.na.2008.12.050     Document Type: Article

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