Assessment of the main material issues for achieving an Er coupled to silicon nanoclusters infrared amplifier

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 6, 2009, Pages 1029-1033

  Navarro Urrios, D ^a   Pitanti, A ^a   Daldosso, N ^a   Gourbilleau, F ^b   Khomenkova, L ^b   Rizk, R ^b   Pavesi, L ^a  

^a UNIVERSITY OF TRENTO   (Italy)

^b UNIVERSITÉ DE CAEN   (France)

Author keywords

Erbium; Optical amplifier; Silicon nanoclusters; Silicon photonics; Waveguides

Indexed keywords

ABSORPTION LOSS; ACTIVE MATERIALS; CARRIER ABSORPTIONS; COUPLED SYSTEMS; DEPOSITION PARAMETERS; FIRST EXCITED STATE; NON-RADIATIVE RECOMBINATIONS; NON-RESONANT; OPTICAL AMPLIFIER; OPTICALLY ACTIVES; OPTIMISATION; PUMP AND PROBES; QUANTITATIVE MEASUREMENTS; SI NANOCLUSTERS; SIGNAL AMPLIFICATIONS; SILICON NANOCLUSTERS; SILICON PHOTONICS; STATE-OF-THE ARTS; TRANSFER PROCESS; UP CONVERSIONS;

ABSORPTION; AMPLIFICATION; ERBIUM; LIGHT AMPLIFIERS; NANOCLUSTERS; NONMETALS; OPTICAL SWITCHES; OPTOELECTRONIC DEVICES; PHOTONIC DEVICES; PUMPS; SIGNAL PROCESSING; SILICON COMPOUNDS; SILICON OXIDES; WAVEGUIDES;

SILICON;

EID: 67349208424     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.08.030     Document Type: Article

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