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Volumn 255, Issue 15, 2009, Pages 6857-6861

Patterning on single crystalline silicon by laser scanning and alkaline etching

Author keywords

KOH etching; Laser processing; Oxide layer; Surface patterning

Indexed keywords

ELECTROMECHANICAL DEVICES; ETCHING; LASER APPLICATIONS; MEMS; POTASSIUM HYDROXIDE; SILICON; SURFACE ANALYSIS;

EID: 67349187265     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.03.005     Document Type: Article
Times cited : (4)

References (7)
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    • Kawasegi N., Miyake S., and Kim J. Fabrication of silicon utilizing mechanochemical local oxidation by diamond tip sliding. Jpn. J. Appl. Phys. 40 (2001) L1247-L1249
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    • Kawasegi, N.1    Miyake, S.2    Kim, J.3
  • 3
    • 21144448681 scopus 로고    scopus 로고
    • Etch stop of silicon surface induced by tribo-nanolithography
    • Kawasegi N., et al. Etch stop of silicon surface induced by tribo-nanolithography. Nanotechnology 16 (2005) 1411-1414
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    • Kawasegi, N.1
  • 4
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    • Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology
    • Kern W., and Puotinen D. Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology. RCA Rev. 31 (1970) 187-206
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    • Kern, W.1    Puotinen, D.2
  • 5
    • 0000031647 scopus 로고
    • Infrared spectroscopy of thin silicon dioxide on silicon
    • Olsen J.E., and Shimura F. Infrared spectroscopy of thin silicon dioxide on silicon. Appl. Phys. Lett. 53 20 (1988) 1934-1936
    • (1988) Appl. Phys. Lett. , vol.53 , Issue.20 , pp. 1934-1936
    • Olsen, J.E.1    Shimura, F.2
  • 6
    • 0030081591 scopus 로고    scopus 로고
    • Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits
    • Wolf I.D. Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits. Semiconduct. Sci. Technol. 11 2 (1996) 139-154
    • (1996) Semiconduct. Sci. Technol. , vol.11 , Issue.2 , pp. 139-154
    • Wolf, I.D.1
  • 7
    • 0342908968 scopus 로고
    • Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in air
    • Dagata J.A., et al. Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in air. Appl. Phys. Lett. 56 20 (1990) 2001-2003
    • (1990) Appl. Phys. Lett. , vol.56 , Issue.20 , pp. 2001-2003
    • Dagata, J.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.