Enhancement and red shift of photoluminescence (PL) of fresh porous Si under prolonged laser irradiation or ageing: Role of surface vibration modes

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 6, 2009, Pages 986-989

  Gardelis, S ^a   Nassiopoulou, A G ^a   Mahdouani, M ^b   Bourguiga, R ^b   Jaziri, S ^b  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b University of Carthage   (Tunisia)

Author keywords

FTIR; Photoluminescence; Porous Si

Indexed keywords

BAND GAPS; ELECTRON AND HOLE ENERGIES; FOURIER TRANSFORM INFRARED ABSORPTION SPECTRUM; FTIR; LASER IRRADIATIONS; PHOTOLUMINESCENCE INTENSITIES; POROUS SI; RED SHIFTS; RESONANT COUPLINGS; SI NANOCRYSTALS; SI-O-SI BONDS; SURFACE VIBRATIONS; THEORETICAL CALCULATIONS; VIBRATION MODES;

ASTROPHYSICS; CHEMICAL ELEMENTS; DOPPLER EFFECT; ELECTRONIC STATES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; IRRADIATION; NANOCRYSTALS; PHOTOLUMINESCENCE; POROUS SILICON; SILICON; VIBRATING CONVEYORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67349160504     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.08.021     Document Type: Article

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