Dielectric properties of A- and B-site doped BaTiO3: Effect of La and Ga

Physica B: Condensed Matter

Volumn 404, Issue 12-13, 2009, Pages 1799-1805

  Gulwade, Devidas ^a   Gopalan, Prakash ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Diffuse phase transition; Doped BaTiO3; Ferroelectric properties; High temperature XRD

Indexed keywords

DIFFUSE PHASE TRANSITION; DOPED BATIO3; FERROELECTRIC PROPERTIES; GA DOPING; HIGH DIELECTRIC CONSTANTS; HIGH TEMPERATURE XRD; LOW TEMPERATURE COEFFICIENTS; ORIENTATION IMAGING MICROSCOPIES; ROOM TEMPERATURES; SOLID-STATE REACTIONS; X-RAY DIFFRACTIONS; XRD;

BARIUM; BARIUM COMPOUNDS; CERAMIC CAPACITORS; DIELECTRIC SPECTROSCOPY; DOPING (ADDITIVES); FERROELECTRICITY; GALLIUM; LANTHANUM; RIETVELD METHOD; RIETVELD REFINEMENT; X RAY DIFFRACTION;

PHASE TRANSITIONS;

EID: 67349154892     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.02.026     Document Type: Article

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